查询词典 incomplete dislocation

In recent years, low dislocation density or dislocation-free GaAs and InP crystals doped with isoelectronic impurities have been r...

近年来，人们用掺等电子杂质的方法来降低GaAs和InP单晶中的位错密度非常重视。

In recent years, low dislocation density or dislocation-free GaAs and InP crystals doped with isoelectronic impurities have been receiving considerable interests.

近年来，人们用掺等电子杂质的方法来降低GaAs和InP单晶中的位错密度非常重视。

The results show that the deformation feature during creep produced in the primary stage is that a great deal of $\langle a\rangle$ dislocation is activated on basal and non--basal planes, and $\langle a+c\rangle$ dislocation slips on pyramidal planes.

结果表明，蠕变初期的变形特征是：大量形变产生的 a 位错在合金的基面和非基面滑移， a ＋c位错在锥面滑移。

Dislocation climb is discussed mechanistically and mathematically, and the stored dislocation energy relieved by annealing is calculated.

由机械上及数学上探讨差排的爬登，及计算退火时差排积蓄能量之释放。

The dislocation structure of the omphacite in the UHP eclogites show that the dislocation creep had worked during its ductile deformation.

4超高压榴辉岩中绿辉石的位错构造发育，说明经历了位错蠕变。

If by means of a prereduction MRI or after neurologic deterioration during closed reduction, the surgeon becomes aware of a fragment of disc material displaced into the spinal canal, then an anterior discectomy, open reduction, fusion, and plating becomes necessary.2,7,9 In approximately half of the cases, a closed reduction will be successful in reducing the dislocation before surgery.50 In the majority of the others, an intraoperative reduction performed after the discectomy and decompression will achieve anatomic reduction.9,51 For those patients in whom an anterior discectomy and decompression have not been successful in reducing the dislocation, then a supplemental posterior open reduction should be performed.52

假如借助MRI检查，或在闭合复位过程中神经症状进一步加重，外科医生意识到有椎间盘碎片突入了椎管，此时就需要前路椎间盘切除减压、开放复位和固定融合。大约有一半的病例手术以前能够通过闭合复位来成功的将脱位复原，剩下的病例则需要在术中将椎间盘切除减压来达到解剖复位。假如有病人经过前方的椎间盘切除和减压后仍然不能成功的还原脱位，则需要再行后方的开放复位术。

It is well known that the large lattice mismatch (16%) and thermal expansion coefficient mismatch between GaN and sapphire substrate are the main origins of TDs. By new growing technique of LEO, we acquired high quality GaN films almost free of TDs. The stress characteristics in GaN films with MLTB growing technique is dependent on growing systems and conditions, and the changes of stress and dislocation density are rightabout; Combining buffer layers of high temperature and low temperature is first developed to growing GaN films with low dislocation density, and the mechanism of lowering TDs density is that the first buffer layer of high temperature can make nuclear in second buffer layer of low temperature bigger. This technique also can restrain yellow luminescence effectively.

众所周知，晶格失配和热应力失配是GaN异质外延中位错产生的主要原因；为此，我们对几种降低缺陷的MOCVD外延生长方法进行了新的尝试，其中尝试了侧向外延生长技术，得到了低位错密度（小于10〓/cm〓）、高质量的GaN外延层；尝试多低温缓冲层法，发现材料中的应力特性与生长系统和生长条件有关，材料中的应力与位错密度按相反方向变化；首次尝试高低温联合缓冲层法，材料中高温缓冲层可以使随后的低温缓冲层中成核颗粒增大，从而导致随后高温GaN外延膜中位错密度降低，并且能够有效地抑制黄光峰。

To investigate the characteristics and treatment strategy for fresh high energy fracture dislocation of tarsometatarsal joints in a retrospective study.From September 2002 to April 2008,43 patients with fresh high energy fracture dislocation of tarsometatarsal joints were treated with cannulated screw combined with Kirschner wire fixation or Kirschner wire fixation alone.

回顾分析空心螺钉结合克氏针或单纯空心螺钉内固定方法的临床和影像学资料，探讨新鲜高能量跖跗关节骨折脱位的临床特点及治疗策略。

Objective:to investigate the treatment outcome of ao/asif clavicular hook plate in the treatment of acromioclavicular joint dislocation (tossy grade ⅲ)and unstable lateral clavicular fractures (neer type 2).methods: from february 2004 to march 2007,23 patients with unstable lateral clavicular fractures (neer type 2),2 patients with no-union lateral clavicular fractures and 5 patients with acromioclavicular joint dislocation (tossy grade ⅲ) were treated with acromioclavicular hook plate.

目的：探讨ao/asif锁骨钩钢板治疗锁骨骨折和肩锁关节脱位的疗效。方法：对2004年2月～2007年3月我科收治的30例得到完整随访资料的锁骨骨折和肩锁关节脱位的患者进行回顾性分析，其中，应用锁骨钩钢板治疗的新鲜锁骨外端不稳定骨折23例，陈旧性锁骨外端骨折骨不连患者2例，tossy grade ⅲ度肩锁关节脱位5例。

As the twinborn shear department of {112}m is obstructed, slipping department {111}P of parent phase begin to work, rely on dislocation"s slipping, coordinate flaky martensite"s twinborn shearing and form dislocation inferior structure at M phase corresponding plane(contain the interface between parent phase and martensite phase).

在本实验电镜照片上可以观察到在片状马氏体亚结构同时存在相变孪晶和形变孪晶，当{112}_m孪生切变系受阻时，母相中滑移系{111}_p启动，依靠母相中的位错滑移协调片状马氏体的孪生切变。

After explaining total design of automated test system for microcircuit , the thesis introduces GPIB standard .

文章在说明了微电路模块自动测试系统的总体设计后，对GPIB标准进行了介绍。

He interceded in my behalf.

他替我说情。