查询词典 etching press

Nanoporous gold with different pore sizes was prepared by controlling the etching time of Au/Ag alloy with concentrated nitric acid and annealing. Scanning electron microscopy and a nitrogen adsorption technique were used to characterize the NPG.

以Au/Ag合金为原料，通过控制浓硝酸的腐蚀时间再辅以退火处理得到了不同孔径的纳米多孔金，利用扫描电镜和N2气体吸附仪对孔性质进行了表征。

Take the 8K mirror kneading board, the electricity galvanized sheet as a ledger wall, after carrying on the etching treatment, carries on the intensive processing again to the object surface, may carry on the partial sand blasting, the wiredrawing, the gold inlay, the partial titanium gold and so on various types complex craft processing, realizes the design light and shade interaction, the color gorgeous effect.

以8K镜面板，电镀板为底板，进行蚀刻处理后，对物体表面再进行深加工，可进行局部的喷砂，拉丝，嵌金，局部钛金等各式复杂工艺处理，实现图案明暗相间，色彩绚丽的效果。

Suitable cleaning methods known in the art include rinsing in organic solvent, rinsing with aqueous detergent solution, mechanical abrasion such as sand-blasting, micro-etching with aqueous acids (eg HCl and H 2 SO 4 ) and aqueous oxidative cleaning with, for example, persulphate or perborate.

适当的清洗在艺术已知的方法包括在有机溶剂，与水清洗剂溶液冲洗，机械磨损，如喷砂，微蚀刻与水酸（如盐酸和H 2 SO 4计）和水的氧化清洗，例如，，过硫酸钾或过硼酸盐。

The anisotropic magnetoresistance and saturation magnetic field of the Permalloy thin films (Ni0.81Fe0.19) sputtered on a nonmagnetic (Ni0.81Fe0.19)0.66Cr0.34 buffer layer were measured. The AMR variations of the films after annealing and the size effect of the AMR stripes after etching were emphatically studied, and a qualitative analysis was proposed through a statistic model. The simulation results agree with the experiments.

研究了以非磁性（Ni0.81Fe0.19）0.66CR0.34薄膜作为过诞层的坡莫合金Ni0.81Fe0.19薄膜的磁电阻效应和饱和磁场，分析退火处理对样品饱和磁场的影响和经刻蚀后的磁电阻效应膜线的尺寸效应，并建立一个统计模型定性分析了其性能变化的机理，计算结果符合实验。

An array of permalloy core solenoids is micromachined as microactuators on (100) silicon wafer. Then anisotropic etching of silicon in KOH solution forms the U-grooves beside the microactuators. The micromachining difficulties from the coexistence of 3-D MEMS devices and deep grooves on chip are overcome successfully. Then two fibers and permalloy piece are assembled onto the wafer together with the microstructures finishing the prototype of the new type MEMS VOA. Third, the inductance, resistance and Q value of the microfabricated solenoids are measured in the frequency range of 1-40 MHz.

第二，新开发了使用SU-85的正胶、负胶复合微加工工艺，在（100）硅片上加工了新型可变光衰减器的铁芯MEMS螺线管型电磁微执行器阵列；用KOH水溶液对（100）硅片进行湿法刻蚀，在电磁微执行器旁边微加工了V形槽结构组合，开发了单片集成三维MEMS器件和深槽的微加工关键技术；然后经过微装配制作出了电磁驱动的光纤偏移型MEMS可变光衰减器的样机。

It attack s most metals and is used for etching steel and photoengraving.

能与大多数金属起作用，用于蚀刻钢材和光刻。

Etching:(1)In photoengraving,the eating away of the non-printing areas of the printing plate by acid to produce a relief printing surface,or in gravure,the eating away of the image into the copper printing plate by acid.

1腐蚀，(2)版面腐蚀，(3)蚀刻版画：(1)在照相雕版方面，用酸把非印纹部份蚀去，造成凸版。在版方面，则用酸把铜片上的印纹蚀去。

The invention provides a method of decreasing big pattern hollow during metal and polysilicon chemical and mechanical rubbing, it mainly uses photoetching and etching technique, combining decorated chemical and mechanical rubbing method, avoids big pattern hollow when metal and polysilicon is rubbed.

本发明提供一种在金属和多晶硅化学机械研磨中减少大图案凹陷的方法，主要通过以光刻和蚀刻技术结合修饰性化学机械研磨的方法，避免对大图案的金属或者多晶硅进行研磨时出现过度凹陷。

After treated the surface of NiNb2O6 photoelectrode by mechanical polishing +chemical etching + photoetching, the stable values of the differential capacitance of the spacecharge layer are measured,the relationship between flatband potential Vfb and pH value of the electrolyte is obtained,and the value of Vfb is compared with its theoretical calculating value.

对电极进行机械抛光加化学抛光加光抛光处理后，测得了NiNb2O6半导体光电极空间电荷层的微分电容的稳定值，得到了平带电势Vfb与电解液pH值间的关系，并与Vfb的理论计算值进行了比较。

Oxidation, diffusion, photoetching process and etching technology were adopted to achieve thin silicon foil with a thickness of 3 to 4 micrometers. The surface roughness was about 10nm and the grain size of silicon foil was nanometer scale. The preparation parameters were studied to control the roughness of thin silicon foil .

通过台阶仪测量厚度在3～4μm的Si平面薄膜，在扫描范围为1000μm时，它的表面粗糙度为几十纳米；SEM测量表明，Si薄膜表面颗粒度在纳米量级；探讨了采用控制扩散、腐蚀参数和表面修饰处理来降低Si膜表面粗糙度的方法。

Yet, Edith says, there was always money in the bank.

但是Edith说，她的银行户口里面总是有钱。

We have created a series of files that resolve this problem--one for each day of the 40 days of purpose.

我们制作一系列的档案去解决这问题---一个为标竿40天中的每一天。