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etch相关的网络例句
与 etch 相关的网络例句 [注:此内容来源于网络,仅供参考]

The morphologies of the CdZnTe etch pits developed by four etchants including Nakagawa, Everson, EAg1 and EAg2 solutions are studied. The results show that the etch pits of EAg2 etchant on the (111) B surface are flat-bottomed. And the etch pits of Everson etchant on (111) B include flat-bottomed pits and pyramidal pits with different slant directions, while the positions of pyramidal pits don′t move as the surface layer is continuously removed.

对碲锌镉晶体常用的Nakagawa、Everson、EAg1和EAg2四种腐蚀剂在碲锌镉材料(111)晶面上的腐蚀坑坑形进行了研究,结果发现,EAg2腐蚀剂在(111)B面上的腐蚀坑为平底坑,Everson腐蚀剂在(111)B面上产生的腐蚀坑包括平底坑和带有不同倾斜方向坑底的三角锥形坑,进一步的研究还表明,三角锥形坑并未沿着坑底的倾斜方向向下延伸。

Furthermore, the photo-tool containing the negative image of the desired etch pattern is often distanced from the etch-resist layer and diffraction of the UV light irradiation can lead to development and polymerisation in unwanted areas of the etch-resist directly beneath the photo-tool masked areas.

此外,有大量的照片工具载有所需的蚀刻模式的负面形象往往是远离了蚀刻,抵制层和紫外光照射可导致衍射发展和聚合在etch中不想要的区域,抵制照片下方的直接工具蒙面地区。

During etching fine details of the etch-resist pattern can be seriously compromised if either the unexposed etch-resist is incompletely removed or if some of the exposed and polymerised etch-resist is removed prior to chemically etching the metal or alloy.

在本蚀刻蚀刻的细节,抵制模式可以将受到严重损害,如果不是未曝光蚀刻,抵制是一种不完全删除或如果揭露和聚合性蚀刻,抵制被删除之前,化学蚀刻的金属或合金一些。

A three-dimensional anisotropic etch rate distribution of Si can be described by two-dimensional etch rate distribu-tions in a series of crystal planes.

硅各向异性腐蚀速率三维分布可由一系列晶面上的二维腐蚀速率分布表示。

More often, all of the materials exposed to the etch ant have a finite etch rate.

通常,所有暴露在刻蚀剂中的材料都具有一定的刻蚀速率。

Therefore, the morphology of the etch pits can be predicted, or conversely the orientation of surface can readily be determined from the morphology of etch pits.

指出:利用这一点,在已知晶面的晶格对称性的情况下,可预料蚀坑的形状;或反过来,从蚀坑的形态可很容易判断其所在晶面的取向。

The morphology of etch pits on different lattice plane is observed by optical microscopy. It is found that the shapes of etch pits are related to the symmetry of lattice plane.

对NYAB晶体中的位错蚀坑观察发现:蚀坑的形状与所在晶面的对称性有关,蚀坑的对称性反映了其所在晶面的晶格对称性。

Is it print micro-structure etch micro-structure height their that happen layout 3.5μm in 150-240nm to transfer to in a large amount, utilize and etch two times to transfer wetly to technology of printing, but a large amount of models the small and complicated three-dimensional structure.

在研制高发光的二极体,可由鳞片内类似光子晶体的微小结构PCS,所形成高亮度发光二极体。

In addition to these etch pits,it is also found that there is another kind of etch pit for both Schaake and Chen etchants,but neither of them threads the HgCdTe epilayer.

除了穿越位错外,在两种腐蚀方法揭示出的腐蚀坑中都还存在着一种不具备穿越特性的腐蚀坑,两者在密度分布以及界面处密度增值方面具有相同的特性,但前者在宏观缺陷附近密度出现明显的增

The exposed areas of metal or alloy which are not protected by the polymerised etch-resist layer are then selectively removed by chemical etching from those areas protected by the etch-resist layer.

暴露的金属或合金的地区不属于蚀刻的聚合性保护抵制层,然后有选择地去除蚀刻由保护层这些地区的抵抗化学腐蚀。

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