查询词典 dislocation of joint

The effect of pre-deformation on the damping capacity was studied and the effect of the movement of Shockley partial dislocation on the damping capacity of FeMnCr alloy was analyzed by dislocation theory.

研究了不同的预变形量对FeMnCr合金阻尼性能的影响，并根据位错运动理论，分析了 Shockley不全位错的运动对该合金阻尼性能的影响。

Methods:The half pelvic fracture and dislocation,fracture and separation of pubic symphysis and hip bone fracture and dislocation were treated with three different methods.

采用三种不同的固定方法，治疗半侧骨盆骨折脱位、耻骨联合骨折分离及髋部骨折脱位。

The spectrum peaks nearby 530nm and 480 nm are corresponding with BTSD and BMD respectively. It is found from measurement that the luminescence peak from BMD is bluely shifted. The atoms of BTSD nearby dislocation core are affected by tensile stress along the Burger's vector direction leading to its band gap narrowed. In addition, there is the effect of part quantity of edge dislocation in BMD existed. Part of atoms in BMD are strained by compressive stress leading to its band gap narrowed, in other words, the wavelength from BMD is shorter than that from BTSD.

从测试结果中还发现BMD 的发光位较BTSD有所蓝移，分析认为BTSD位错芯附近原子沿伯格斯矢量方向只受到拉应力，致使禁带宽度变窄，BMD由于除了具有螺型位错的分量外还具有部分刃型位错的分量，而刃型位错中有部分原子受到压应力的作用，导致禁带宽度增宽，从而使得BMD的发光波长比BTSD短

In recent years, low dislocation density or dislocation-free GaAs and InP crystals doped with isoelectronic impurities have been r...

近年来，人们用掺等电子杂质的方法来降低GaAs和InP单晶中的位错密度非常重视。

In recent years, low dislocation density or dislocation-free GaAs and InP crystals doped with isoelectronic impurities have been receiving considerable interests.

近年来，人们用掺等电子杂质的方法来降低GaAs和InP单晶中的位错密度非常重视。

The results show that the deformation feature during creep produced in the primary stage is that a great deal of $\langle a\rangle$ dislocation is activated on basal and non--basal planes, and $\langle a+c\rangle$ dislocation slips on pyramidal planes.

结果表明，蠕变初期的变形特征是：大量形变产生的 a 位错在合金的基面和非基面滑移， a ＋c位错在锥面滑移。

Dislocation climb is discussed mechanistically and mathematically, and the stored dislocation energy relieved by annealing is calculated.

由机械上及数学上探讨差排的爬登，及计算退火时差排积蓄能量之释放。

The dislocation structure of the omphacite in the UHP eclogites show that the dislocation creep had worked during its ductile deformation.

4超高压榴辉岩中绿辉石的位错构造发育，说明经历了位错蠕变。

If by means of a prereduction MRI or after neurologic deterioration during closed reduction, the surgeon becomes aware of a fragment of disc material displaced into the spinal canal, then an anterior discectomy, open reduction, fusion, and plating becomes necessary.2,7,9 In approximately half of the cases, a closed reduction will be successful in reducing the dislocation before surgery.50 In the majority of the others, an intraoperative reduction performed after the discectomy and decompression will achieve anatomic reduction.9,51 For those patients in whom an anterior discectomy and decompression have not been successful in reducing the dislocation, then a supplemental posterior open reduction should be performed.52

假如借助MRI检查，或在闭合复位过程中神经症状进一步加重，外科医生意识到有椎间盘碎片突入了椎管，此时就需要前路椎间盘切除减压、开放复位和固定融合。大约有一半的病例手术以前能够通过闭合复位来成功的将脱位复原，剩下的病例则需要在术中将椎间盘切除减压来达到解剖复位。假如有病人经过前方的椎间盘切除和减压后仍然不能成功的还原脱位，则需要再行后方的开放复位术。

It is well known that the large lattice mismatch (16%) and thermal expansion coefficient mismatch between GaN and sapphire substrate are the main origins of TDs. By new growing technique of LEO, we acquired high quality GaN films almost free of TDs. The stress characteristics in GaN films with MLTB growing technique is dependent on growing systems and conditions, and the changes of stress and dislocation density are rightabout; Combining buffer layers of high temperature and low temperature is first developed to growing GaN films with low dislocation density, and the mechanism of lowering TDs density is that the first buffer layer of high temperature can make nuclear in second buffer layer of low temperature bigger. This technique also can restrain yellow luminescence effectively.

众所周知，晶格失配和热应力失配是GaN异质外延中位错产生的主要原因；为此，我们对几种降低缺陷的MOCVD外延生长方法进行了新的尝试，其中尝试了侧向外延生长技术，得到了低位错密度（小于10〓/cm〓）、高质量的GaN外延层；尝试多低温缓冲层法，发现材料中的应力特性与生长系统和生长条件有关，材料中的应力与位错密度按相反方向变化；首次尝试高低温联合缓冲层法，材料中高温缓冲层可以使随后的低温缓冲层中成核颗粒增大，从而导致随后高温GaN外延膜中位错密度降低，并且能够有效地抑制黄光峰。

The teacher likes the honeymouthed little girl very much.

老师很喜欢这个嘴甜的小姑娘。

Mr. Notker Bien's interests are traveling, spending quality time with the family and long-distance-running.

诺特卡·柏恩先生热爱旅游，长跑，以及和家人一起共度美好时光。