查询词典 cuticular layer

According to core observation and description, many deformation structures with seismite characteristics are recognized within sandstone and shale sedimentary strata of Paleogene continental faulted basin in Yangxin Subsag, such as micro-faults, earthquake fissures, liquefaction sandstone veins, water-escape structure, vibrational liquefaction deformation structure, seismic pillow structure and associated structure, etc. The vertical sequence of seismites in Yangxin Subsag, in ascending order, is underlying unshocked layer, micro-faults layer, autoclastic shattered breccia layer, vibrational liquefaction deformation structure layer, seismic pillow structure and associated structure layer, liquefied homogeneous layer and overlying unshocked layer, which corresponds to different earthquake intensity respectively.

通过岩心观察和描述，在阳信洼陷古近系陆源碎屑断陷湖盆砂泥质沉积地层中识别出大量具有震积岩特征的变形构造，如微断层和震裂缝、水下岩脉和泄水构造、振动液化卷曲变形构造、震积枕状层及伴生构造等，同时建立了阳信洼陷震积岩垂向序列，自下而上分别是下伏未震层段、微断层层段、震碎角砾岩段、振动液化卷曲变形层段、震积砂枕及伴生构造层段、液化均一层段和上覆未震层段。

The outer neuroblastic layer before it divided to inner and outer nuclear layer and outer complexiform layer and gonglion cell layer showed a temporal PCNA positive which was related to proliferation. The three cell layers had another PCNA positive when finished time changed from outer to inner after their morphologic development basically completed( outer nuclear layer:11～15 days,inner nuclear layer: 8～16 days, gonglion cell layer:16～21 days).

PCNA显示在外成神经细胞层分化为内、外核层和外丛状层之前，和节细胞各有一次和增殖相关的阳性表达。3个细胞层在形态学的分化基本完成后，又出现了一次结束时间是由外向内变化的阳性过程（外核层：第11天至15天：内核层：第8天至16天，神经节细胞层： 16天到21天，这一次阳性表达过程可见到细胞形态向成年形态的转化。

The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si.sup.+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer.

专利简介本发明系关於一种紫外光检测器及制程方法，其主要系在一基板上形成一缓冲层，利用磊晶法在缓冲层上形成一P型氮化镓系层，并接著以离子布植技术将Si+离子适当地布植於该P型氮化镓系层中，形成一N型氮化镓系层及包覆在此N型氮化镓系层中且布植浓度更高的另一N型氮化镓系层，最后在该P型氮化镓系层及第二N型氮化镓系层上分别镀上一环状金属层及另一金属层，以作为欧姆接触层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

The results showed that the structure of retina in Lasiopodomys mandarinus exhibited typical structure of vertebrates, including retinal pigment epithelium, rod cone layer, outer nuclear layer, outer plexiform layer, inner nuclear layer, inner plexiform layer, ganglion cell layer, and nerve fiber layer from outside to inside.

结果表明，棕色田鼠的视网膜结构呈典型的脊椎动物视网膜结构类型，由外向内分别为色素上皮、视锥视杆层、外核层、外网层、内核层、内网层、节细胞层、神经纤维层。

Alloy of polyethylene of element of the methodological freeboard that make, titanium and sample of alloy of cobaltic chromic molybdenum, FITC of classics of cuticular grape coccus labels, the cuticular grape coccus that after sample of artificial and articulatory material is disinfected, vaccinal FITC labels, sample surface cent is slick surface and rough surface, every groups each 6 sample, brood the 24 orifice plate that contain bacterium and sample below 37 ℃ after Yo 30min, with fluorescent microscope observation, sample uses observation of scanning report lens.

方法制作超高分子聚乙烯、钛合金和钴铬钼合金试样，表皮葡萄球菌经FITC标记，人工关节材料试样消毒后接种FITC标记的表皮葡萄球菌，试样表面分为光滑表面和粗糙表面，每组各6个试样，将含有细菌和试样的24孔板在37℃下孵育30min后，用荧光显微镜观察，试样用扫描电镜观察。

This article reviews the functions of VLCFAs and cuticular wax, and the recent progress in cloning and characterization of genes encoding enzymes involved in catalyzing VLCFAs and cuticular wax biosynthesis. The problems existing in researches of wax genes are also discussed.

文章就VLCFAs及角质层蜡质合成代谢途径中相关酶基因研究进展方面做了综述，并对植物蜡质基因研究中存在的问题提出一些看法。

Three types of cuticular thickening at the polar region of the guard cells are observed: slight cuticular thickening; rod-shaped culicular thickening and rarely T-shaped thickening.With data obtained from the former research and personal observation, the cladistic methods were employed for the phylogenetic analysis of data and trees were rooted byout-group comparison using, the related genus Kadsura. as result, a new system of the genusSchisamdra Michaux was reconstructed, and Schisandra Michaux was subdivided into 2 subgenus, 3 section, 2 series 10 species in this dissertation.

整理有关五味子属植物研究的资料，补充搜集近期发表的资料和本人研究所得数据，以种为基本单元，选择近缘的南五味子属作为外类群，采用PAUP4.0b4a软件对本研究得出的性状数据作分支分析，重建五味子属的系统发育，修订和补充五味子属分类系统，在五味子属下设2亚属、3组、2系、10种。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。

The third approach is about the concept of an ITO direct Ohmic contact structure on GaP window layer. The direct Ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. The presence of this thin AuBe diffused layer yields the Be dominant metallic surface layer and significantly reduces the barrier height between the ITO and p-GaP layer. Via the modification of contact structure, not only the brightness was significantly increased but the reliability was comparable to the conventional LED without this structure.

第三个研究为一种具有直接欧姆接触在p型磷化镓窗层与氧化铟锡界面的制程方法，於本研究中并无习知砷化镓欧姆接触层的存在，我们利用金/金铍金属藉由热退火程序，使其金铍原子在磷化镓窗层表面形成具金属特性之薄膜层，降低磷化镓与氧化铟锡接触产生之接面能障；另外，该元件在氧化铟锡直接欧姆接触於磷化镓窗层下，除亮度具明显提升外，在稍大电流(20毫安培)元件可靠度测试下，亦未有明显衰减情形发生。

These are places without aristocratic baggage; egalitarian places open to talent, self-improving, engaged in learning and innovation through networks that were at once competitive and cooperative.

这些地方没有贵族遗风作祟，而且对于那些有天分的人是开放的平等之地，这些人善于通过那些曾经很具有竞争力与合作精神的关系网进行自我提高以及学习创新。

Christine: You don't want to see me?

你不想见我？