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Helicon相关的网络例句

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AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程,利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝,再直接溅镀金属铝作为指叉电极,比较目前文献制作出来的氮化铝MSM元件,可得到很好的元件金半接面之理想因子1.0125,算出萧特基能障高度为0.916eV,并有很低的暗电流为1.39 pA,提升了元件的特性,使用150 W氘灯入射,光暗电流差距可到两个order,且元件之光电流与入射光功率呈线性,显示所制作之氮化铝MSM元件,很适合针对深紫外光波段侦测。

I was born and grew up in Tel Aviv. I'm a poet, and the chief editor of Helicon Poetry Society

答;我在特拉维夫出生和长大,我是个诗人,担任HELICON 诗歌协会会刊的主编。

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