查询词典 Auger effect

By analyzing the escape of X-ray and Auger electron generated by 37Ar, wall effect of internal gas proportional counter in 37Ar activity measurement was studied theoretically. Escape of X-ray is the main reason for wall effect of internal gas proportional counter in 37Ar activity measurement.

通过分析37Ar衰变产生的X射线和俄歇电子在内充气正比计数管灵敏体积中的逃逸及计数管在37Ar活度测量中的壁效应，得出X射线在正比计数管中的逃逸是产生壁效应的主要原因，提出了压力指数外推方法。

By analyzing the escape of X-ray and Auger electron generated by 37Ar, wall effect of internal gas proportional counter in 37Ar activity measurement was studied theoretically. Escape of X-ray is the main reason for wall effect of internal gas proportional counter in 37Ar activity measurement. Thus, the exponential extrapolation method of pressure was proved correctly.

通过分析37Ar衰变产生的X射线和俄歇电子在内充气正比计数管灵敏体积中的逃逸及计数管在37Ar活度测量中的壁效应，得出X射线在正比计数管中的逃逸是产生壁效应的主要原因，提出了压力指数外推方法。

The result shows that auger drill tips has little effect on the hole drilling resistance.

结果表明，钻尖的类型对钻孔阻力矩有一定的影响，但较小；切土刀刃角在30°，45°，60°的变化，对钻孔阻力矩几乎没有影响。

Auger effect spectrum of tungstenmesh samples shows that the thickness of the oxidizedlayer changes with quenchtreated temperature.

不同的淬火温度，将使钨网表面形成不同厚度的氧化膜。

The mechanism of multiple-ionization is analyzed. The highly charged recoil ions come mainly from the Auger effect. The electron-electron interaction comes in to effect as the incident energy increases.

对多重电离的电离机制分析表明：高价态的反冲离子主要来自于俄歇贡献；随着入射能量的升高，电子-电子间的库仑作用也逐渐显现。

The sharp rising process of the reflectivity was explained quantitatively well based on the model of Auger recombination of high density plasma and Auger-recombination-induced heating to lattice, which showed the heating effect induced by Auger recombination in high density plasma should be the main mechanism of ultra-short laser pulse-induced phase change.

利用高密度等离子体的Auger复合及其感应的晶格加热模型较好地定量解释了反射率从最小到最大的快速变化过程，表明高密度等离子体的Auger复合加热导致的热效应可能是超快激光诱导相变发生的主要机制。

In an ultrahigh vacuum chamber with a base pressure of 1 x 10-10 torr, we have used Low Energy Electron Diffraction and Temperature Programmed Auger to study the effect of adsorbates on the surface structure of Nb(111). That is, in O/Nb(111) systems, we observe the structure of the surface with LEED to see if any surface reconstruction occurs after annealing and analyze the structure.

在超高真空(约1 x 10-10 torr)的环境下，我们利用了低能量电子绕射(Low Energy Electron Diffraction， LEED)、可程式控温欧杰能谱(Temperature Programmed Auger， TPA)，来研究氧覆盖层对於铌基板的影响，亦即PO/Nb(111)表面系统中，再利用LEED观察是否有任何表面重构的现象发生并详细分析此结构。

The near band edge emission of GZO films has a blue shift with the increase of Ga doping concentration because of Burstein-Moss effect. Auger effect became obvious in Ga heavily doped ZnO which led to the quench of NBE emission.

研究表明近带边发射峰的移动主要是由Burstein-Moss效应引起；俄歇效应导致了近带边发射随Ga掺杂的增加产生猝灭现象；用微区应力模型解释了深能级跃迁发射带。

In chapter 2 and 3, experimentally, using the Angular-Resolved high-resolution fast Electron Energy Loss Spectrometer , at the condition of 2. 5 keV incident energy and 50-60 meV energy resolution, we measured the Optical Oscillator Strength Density Spectra for the excitations of 4p, 4s or 3d electron. The oscillator strengths for excitations of the valent shell 4p electron were obtained, and comparisons were done between presently experimental and previously experimental and theoretical results. The experimental results of different groups agree with each other approximately, but the semi-experientially theoretical results do not match with the experimental results. The delayed maximum in the photoabsorption spectra was discussed. It should arise from the transition of 4p→∈d. For the excitation of the inner-valent 4s electron, the discrepancies for the resonant structures in previous electron-impact results and photoionization results were clarified in present work, which confirms again that the fast electron impact method is suitable to measure the optical oscillator strengths. The autoionization Rydberg series 4s〓ns (n=5, 6, 7) and 4s〓nd (n=4, 5, 6, 7) were identified without ambiguity by the measurement at 0°, 2° and 4°scattering angles. The energy levels and natural widths of the excitations of Kr3d and Ar2p inner shell, including optically allowed and forbidden transitions, were determined. The widths of these inner shell excitations are nearly the same, which was interpreted by the Resonant Auger effect .

在第二章和第三章，实验上，使用角分辨的高能量分辨快电子能量损失谱仪，在2.5keV电子入射能量和50-60meV能量分辨下，测量了Kr原子由价壳层4p到内价壳层4s，再到内壳层3d电子激发的光学振子强度密度谱；得到了价壳层4p电子激发束缚态的光学振子强度，与前人实验和半经验理论结果作了细致的比较，说明几家实验是比较符合的，但半经验的理论计算存在问题；分析了光吸收谱中的延迟极大现象，说明在第一电离阈值以上几个eV范围内的极大值源于4p→εd跃迁产生的延迟极大；对于内价壳层4s激发的自电离区，澄清了前人实验中电子碰撞方法和光学方法在共振结构上存在差异的问题，再一次肯定了快电子碰撞方法是获得绝对光学振子强度的一种好方法；通过在非0°散射角的测量（如2°和4°），清楚地标识了4s电子激发的光学禁戒跃迁自电离里德堡系列4s〓ns（n=5，6，7）和4s〓nd（n=4，5，6，7）；通过在0°和4°散射角的测量，观测并标识了几个新的内壳层光学禁戒跃迁能级，得到了Kr原子3d和Ar原子2p内壳层激发态（包括光学允许和禁戒跃迁形成的）的能级位置和自然宽度，用共振俄歇效应解释了这些内壳层激发态（不管是光学允许还是禁戒跃迁产生的）的自然宽度彼此比较接近的原因。

It is also known as one of the most poisonous naturally occurring substances.

它也被称为一个最自然发生的有毒物质。

The greatest stress is found at the location on the cross section where V is the largest.

最大应力出现在横截面上V为最大的地方。