阈值电压

词组短语

threshold voltage

与阈值电压相关的网络例句 [注：此内容来源于网络，仅供参考]

Voltage of 555IC fanout or assistant fanout feeding back to input for voltage apron string,forms deferent DS feedback,and holds threshold voltage inside two comparators to float along with.

把555IC输出端或辅助输出端的电压反馈到电压控制输入端，形成输出的数字信号反馈，使内部2个比较器的阈值电压随之浮动。

Based on the analysis of operation mechanism and development of the charge pump,as well as the factors limiting its efficiency and speed,a new method using triple-well structure and charge transfer switches is suggested to eliminate threshold voltage drop and body effect.The clock driving circuit is specially optimized to lower output resistance,and speed up the response.

在分析电压泵工作原理和结构演变并指出当前实现方法在驱动和响应上的制约因素的基础上，结合目前先进Flash Memory工作电压和工作要求，提出了结合三阱工艺和CTS方法以消除体效应和阈值电压降从而提高性能的四相位电荷泵设计方法，专门对时钟驱动进行的优化，提高了响应速度。

These materials have excellent chemical and thermal stability, high melting point, high thermal conductivity, high breakdown voltage and large carrier mobility rate especially the smaller electron affinity and potential or even a negative electron affinity, and the situation has greatly reduced the market launch of the threshold voltage, therefore, Field emission of such material will have a very vast potential for development and application prospects.

这些材料具有良好的化学与热稳定性、高熔点、高热导率、高击穿电压及大的载流子迁移率，特别是较小的电子亲和势甚至是负的电子亲和势，大大降低了场发射的阈值电压，因此，这类场发射材料将有着极为广阔的发展潜力及应用前景。

The main work can be summed up as follows: Firstly, we studied the thermal-field properties of VCSELs, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. Secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of VCSELs, and then studied the influences of the oxide-confining region with different position or thickness, and the different sizes of the gain-guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. Thirdly, we realized the coupling of electricity, optical and thermal-fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, Fermi levels and optical-field. Finally, we gave the equipotential line distributions with considering N-DBR and double oxidized-confining regions, and analyzed theinfluences of N-DBR and double oxide-confining regions on the distributions of the current density, carrier concentration, temperature and optical-field.

具体工作可以概括如下：首先，研究了VCSEL的热场特性，分析了电流扩展，材料参数和工作条件对于温度分布的影响；其次，从电极电压入手，计算出激光器中的等势线分布，并对不同深度处的电压和电流分布进行比较，研究了高阻区的不同位置和不同厚度、限制层和出射窗口半径的大小对电流密度、载流子浓度和温度分布的影响；再次，实现了电、光、热耦合，求出了阈值电压，计算了不同偏置电压下的电流密度分布、载流子浓度分布和热场分布，分析了温度和载流子浓度变化对折射率、费米能级和光场的影响；最后，给出了考虑N-DBR和双氧化限制层时激光器中的等势线分布，分析了N-DBR和双氧化限制层对VCSEL电流密度、载流子浓度、温度和光场分布的影响。

It is found that the change of threshold voltage value fits in exponential law with absorbed dose,which is caused by the effect of space charge and interface charge.

产生这种现象的原因是场效应管氧化物中的空间俘获电荷与吸收剂量近似成线性变化，对阈值电压变化和吸收剂量有近似线性的改变；而界面态对空间电荷有补偿作用，其对阈值电压的改变与吸收剂量有近似成二次方的关系。

Base on the threshold voltage model presented, an intrinsic drain current model in strong inversion region is developed, which can describe the short-channel effects such as DIBL and charge-sharing effect well, and give special considerations for mobility, velocity saturation, channel length modulation and quantum effect. Based on the front interface surface potential model, a formula of unified inversion charge is derived, and an intrinsic drain current model in middle inversion region is developed.

利用所提出的深亚微米FD器件正、背界面表面势模型，建立了一个能够完整描述深亚微米FD器件本征亚阈漏电流特性的模型，能够准确地描述DIBL效应和背沟道漏电效应；利用所提出的阈值电压模型，建立了深亚微米全耗尽器件的本征强反型电流模型，很好地描述包括DIBL效应、电荷分配效应在内的小尺寸效应，对迁移率、速度饱和效应、沟道长度调制效应和量子效应进行了特别的考虑；利用所提出的深亚微米FD器件正界面表面势模型，推导了统一反型层电荷公式，建立了深亚微米FD器件的本征中反型漏电流模型。

A threshold voltage of the first memory cell is higher than a first verifying voltage.

第一存储单元的阈值电压高于第一校验电压。

This peak voltage setting becomes the threshold used for calculation of the voltage response curve for the instrument.

这个峰值电压设置为阈值电压，用来计算仪器的电压响应曲线。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

The minimum of the surface potential is used to deduce the threshold voltage model.

同时利用阈值电压的定义得到了阈值电压的模型。

与阈值电压相关的网络解释 [注：此内容来源于网络，仅供参考]

plateau：坪

对于光电倍增管,在理论上不存在"坪"(plateau). 但随着高压的增加,在一定范围内,脉冲数变化较小,形成一段坡度较小的电压脉冲曲线,通常也称其为坪. 测坪曲线的方法:固定放射源,根据其射线能量的大小,初选 一个广大器增益(放大倍数)和甄别器阈值.

threshold voltage：阈值电压

C注意事项-量和单位使用国际标准和国家法定计量单位一篇文章不要用一个符号表示两个或多个物理量,如用C同时表示常数和电容首次出现(公式)的符号应在其后说明物理意义量的符号一般为单个字母,如阈值电压(Threshold Voltage) 不能用TV ,应当用 Vt 组合单位的斜线不能多于1个,

Threshold voltage levels：(阈值电压)

Main voltage regulator (主电压调节器), 7-2 | Threshold voltage levels (阈值电压), 7-2 | Error Correction Code (纠错码)(纠错码)(纠错码)(纠错码), 4-8

Voltage threshold：电压阈值

还有一些参数建立了输入信号的安全限制,以及代表逻辑1和0的电压阈值(voltage threshold)等. 阈值电压限定了输入电压的大小,使器件按正常功能运行,而不会出现把逻辑1视为逻辑0的现象. 这里还有对输出驱动能力的限制,使用时请保证器件的输出负载不能超出额定值,

Voltage threshold：阈值电压

Voltage threshold 电压阈值 | Voltage threshold 阈值电压 | Wash station 水洗工位

Voltage threshold：阈值电压QDJ中国学习动力网

voltage standing wave ratio 电压驻波比QDJ中国学习动力网 | voltage threshold 阈值电压QDJ中国学习动力网 | volume 音量QDJ中国学习动力网

VAUX：辅助电压

规定了 VSHUNT 的大小,将辅助电压 (VAUX) 设为刚好高于控制器件的 UVLO 开启阈值. 在串联旁通稳压器暂停运行之前,该电压一直为控制器件提供电源. 一旦电路暂停运行,晶体管 Q1 将关闭,同时自举电路将不再有任何功耗并节约能源,

VAUX：辅助输出电压

VACUV AC欠压阈值 | VAUX 辅助输出电压 | VAUXREF 辅助输出参考电压