acceptor impurity

acceptor impurity的基本解释

-

[化] 受主

与acceptor impurity相关的网络例句 [注：此内容来源于网络，仅供参考]

When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".

当半导体中加入了施主感受主杂质，我们就说该物质"掺杂"了。

The donor impurity and grain boundary combustion-supporting agent containing acceptor impurity were added successively in the ceramic powder during ceramic powder preparation, both of them can also promote grain growing and semiconductive, and the combustion-supporting agent can be good to form insulation layer in oxidizing process.

采用一次性烧成技术研制了晶界层半导体陶瓷电容器，在瓷料配制过程中先后加入施主杂质和含有受主杂质的晶界助烧剂，两者在还原烧成时促使晶粒生长并半导化，助烧剂在氧化时有利于晶界绝缘层形成。

In the research of prescription, through the experiments we knew the influence from the Nb_2O_5 or Y_2O_3 single donor doped on high-temperature PTC ceramic, and got the curve graph drawing the resistivity and mixing quantity. In order to restrain lead volatilize and mix the rang of donors to neutralization the harmful acceptor impurity in raw materials, adopt the prescription design of Nb_2O_5 and Y_2O_3 double donors-doped. From the result, we know that regulation proportion of Nb , Y double donors, can make high-temperature PTC ceramics semiconducting, the pottery demonstrates good electric performance.

为了能够更有效的抑制铅挥发，并且使掺杂范围能够更好的调节，以"中和"原材料中的有害受主杂质，在配方设计中采用了Nb_2O_5和Y_2O_3双施主掺杂的配方，由结果可知，适当的调节Nb、Y双施主掺杂总量及Nb、Y掺杂比例，可以使高温PTC陶瓷充分的半导化，陶瓷表现出良好的电性能。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。

与acceptor impurity相关的网络解释 [注：此内容来源于网络，仅供参考]

acceptor impurity：受體雜質

acceptor doping 受體摻雜 | acceptor impurity 受體雜質 | accommodation 調節,視覺調節

acceptor impurity：受钟质

acceptor density 受周度 | acceptor impurity 受钟质 | acceptor level 受周级

acceptor impurity：受主杂质

acceptor circuit 接受器电路 | acceptor impurity 受主杂质 | acceptor material 受主物质

acceptor impurity：受素不纯物

acceptor受素;受体 | acceptor impurity受素不纯物 | accessory mineral附生矿物

acceptor impurity level：受主杂质能级

acceptor impurity 受主杂质 | acceptor impurity level 受主杂质能级 | acceptor level 受主(能)级