查询词典 stimulus threshold

Giving two equal-intense stimuli which is higher than the threshold stimulus and whose intervals are longer than the single twich period, two independent contracting curve can be observed. Giving two equal-intense stimuli which is higher than the threshold stimulus and whose intervals are longer than the refractory period, an additive-contracting curve can be observed. Giving several equal-intense stimuli which is higher than the threshold stimulus, tetanus curve can be observed.

当给予两个等强度的阈上刺激，且刺激的间隔大于单收缩的时程，在计算机中可以观察到两个独立的收缩曲线；当给予两个等强度的阈上刺激，且刺激的间隔小于单收缩的时程而大于不应期，在计算机中可以观察到两个收缩曲线的叠加，称为收缩的总和；当给予若干个等强度的阈上刺激，在计算机中就可以观察到强直收缩曲线。

Based on much resolutional analysis wavelet threshold de-noising method ,an improved threshold function is proposed. it overcomes the shortcomings of the hard threshold with discontinuous function ang solves the problem of the permanent bias in soft threshold function,and it is more elastic than the soft threshold and hard threshold function.

在多分辨分析小波阈值去噪的基础上，采用了一种改进的阈值函数，克服了硬阈值函数不连续的缺点，解决了软阈值函数中存在的恒定偏差，并且具有软硬阈值函数不可比拟的灵活性。

The threshold determining device (10) determines a similarity of each data to others for each data, determines the threshold of the similarity satisfying a predetermined coincidence/incoincidence, for each data, determines an individual threshold distribution of the data for each threshold on each of the data, and determines the threshold common to the entire data, as overall data on the basis of the individual threshold distribution.

阈值确定设备针对每个数据确定每个数据相对于其它数据的相似性，针对每个数据确定满足预定假匹配率的相似性的阈值，针对每个数据的每个阈值确定数据的个体阈值分布，并且根据个体阈值分布将全部数据共用的阈值确定为整体数据。

The new threshold function overcomes the shortcomings of the hard threshold with discontinuous function and solves the problem of the permanent bias in soft threshold function,and it is more flexible than the soft threshold and hard threshold function.

新阈值函数克服了传统硬阈值函数不连续的缺点，解决了软阈值函数中存在的恒定偏差，并且具有软硬阈值函数不可比拟的灵活性。

The plasma ignition threshold of metal is got through experimental and numerical study. The vapour and plasma ignition times of the target are got based on the equation of heat conduction and cascade model. We suppose that the plasma is ignited when generations of new electrons are born in vapour generation time. The influence of temperature on the thermodynamics and optics parameters of material also have been considered in the model. The resulting theory has good agreement with the experiment and overseas report. A blade method to measure the laser spot is given in this paper with validation and error analysis. The plasma threshold of metals in atmosphere and water ambients both are diagnosed with the light deflection and piezoelectric transducer. A Q-switched pulsed Nd:YAG laser operating at infrared (1064nm), visible(532nm) and ultraviolet (355nm) wavelengths has been used. Al、Fe、Cu are used as targets and get a similar results with both method. Theoretical and experimental analyses are applied on the influence of wavelength on the threshold have been done, both of which have shown that the plasma threshold of metals decrease as the laser wavelength increases; The plasma threshold of metals are higher in water than in air and the pressure of the shock wave in water is five times higher than in air .

从热传导方程和雪崩电离机制出发，假设当电子增值210倍时，考虑了温度对材料热力学和光学参数的影响时，得到了气化和等离子体点燃的时间，利用该模型进行计算得到的结果与国内外报道及自行通过实验测得的阈值基本一致；提出了利用刀刃法测量激光光斑面积的方法，并通过实验进行了验证和误差分析；利用光偏转装置和压电换能器分别对空气和水中金属等离子体点燃阈值进行了实验诊断，激光器均为调Q－YAG激光器（波长1064nm，532nm，355nm，脉宽10ns），靶材分别为Al、Fe和Cu，两种测试方法得到的等离子体点燃阈值基本一致；本文从实验和理论计算两个方面讨论了波长对等离子体点燃阈值的影响，均得到了等离子体点燃阈值随著波长的增加而减小的结论；对空气中和水中不同环境下金属等离子体的点燃阈值进行了比较研究，得到了金属在水中的等离子体点燃阈值比空气中的大，且水中产生的冲击波的压强是空气中的5倍左右的结论。

Because a stimulus does not suddenly become clearly detectable at all times at specific intensity, the operational definition of absolute threshold is the stimulus level at which a stimulus is detected half the time.

因为刺激并不是突然间在某种强度变得能轻易被觉察到，所以关于绝对阈限的定义是--能在一半的次数中被被试所觉察到的刺激水平。

The vapour and plasma ignition times of the target are got based on the equation of heat conduction and cascade model. We suppose that the plasma is ignited when 210 generations of new electrons are born in vapour generation time. The influence of temperature on the thermodynamics and optics parameters of material also have been considered in the model. The resulting theory has good agreement with the experiment and overseas report. A blade method to measure the laser spot is given in this paper with validation and error analysis. The plasma threshold of metals in atmosphere and water ambients both are diagnosed with the light deflection and piezoelectric transducer. A Q-switched pulsed Nd:YAG laser operating at infrared (1064nm), visible(532nm) and ultraviolet (355nm) wavelengths has been used. Al、Fe、Cu are used as targets and get a similar results with both method. Theoretical and experimental analyses are applied on the influence of wavelength on the threshold have been done, both of which have shown that the plasma threshold of metals decrease as the laser wavelength increases; The plasma threshold of metals are higher in water than in air and the pressure of the shock wave in water is five times higher than in air.

从热传导方程和雪崩电离机制出发，假设当电子增值2~(10)倍时，考虑了温度对材料热力学和光学参数的影响时，得到了气化和等离子体点燃的时间，利用该模型进行计算得到的结果与国内外报道及自行通过实验测得的阈值基本一致；提出了利用刀刃法测量激光光斑面积的方法，并通过实验进行了验证和误差分析；利用光偏转装置和压电换能器分别对空气和水中金属等离子体点燃阈值进行了实验诊断，激光器均为调Q—YAG激光器(波长1064nm，532nm，355nm，脉宽10ns)，靶材分别为Al、Fe和Cu，两种测试方法得到的等离子体点燃阈值基本一致；本文从实验和理论计算两个方面讨论了波长对等离子体点燃阈值的影响，均得到了等离子体点燃阈值随着波长的增加而减小的结论；对空气中和水中不同环境下金属等离子体的点燃阈值进行了比较研究，得到了金属在水中的等离子体点燃阈值比空气中的大，且水中产生的冲击波的压强是空气中的5倍左右的结论。

The results showed that:(1) The characteristic frequency of IC neurons of house mouse was increased with increasing recording depth, and the masker intensity used was positive relevant to the IC neurons\' minimum threshold. When the minimum threshold was high, the masker intensity needed was loud, vice versa.(2) According to the masking rate at MT+10dB of IC neurons to frequency modulation and tone burst, the IC neurons were classified as three types: type I neurons ( 72/113, 63.7%), in which the masking effect of TB was better than frequency modulation ;type II neurons (32/113, 28.3%), in which the masking effects of the two maskers were same; type III neurons( 9/113, 8.0%), in which the masking effect of FM was better than TB.(3) Type I neurons, the minimum threshold of which was low, but the Q_(10) and DR values of which were large; in type III neurons, the minimum threshold was high, the Q_(10) and DR values were narrow; in type III neurons, the MT Q_(10) and DR values were in between.(4) Both FM and TB could make the MT of type I neurons shift upward distinctively, but the effect of TB was more significant than FM.(5) The Q_(10) values of type I neurons became narrower under the influence of TB, were unaffected under the influence of FM.

结果显示：(1)小鼠下丘神经元的特征频率随着记录深度的增加而增高，掩蔽声强度与神经元的最小阈值呈正相关，即对高最小阈值的神经元进行掩蔽时需要的掩蔽声强度高，对低最小阈值神经元进行掩蔽需要的掩蔽声强度低：(2)根据调频声(frequency modulation， FM)和短纯音(tone burst， TB)对下丘神经元阈上10dB处反应的掩蔽，将小鼠IC神经元分为三类：Ⅰ类神经元(72/113，63.7％)，短纯音的掩蔽效果比调频声更好；Ⅱ类神经元(32/113，28.3％)，两者对神经元声反应的掩蔽率相同；Ⅲ类神经元(9/113，8.0％)，调频声的掩蔽效果更好；(3)Ⅰ类神经元的最小阈值低、Q_(10)值和动态范围大，Ⅲ类神经元最小阈值高、Q_(10)值和动态范围小，Ⅱ类神经元的最小阈值、Q_(10)值和动态范围介于Ⅰ和Ⅲ类神经元之间；(4)短纯音和调频声都可以使Ⅰ类神经元声反应的最小阈值明显上移，但短纯音使神经元最小阈值的上移更显著：(5)短纯音使Ⅰ类神经元的Q_(10)值变小，调频声使神经元的Q_(10)值增大不显著，短纯音与调频声对神经元Q_(10)的影响差别显著；(6)短纯音与调频声都使神经元的动态范围减小，并且作用显著，但短纯音的效果更显著：(7)短纯音与调频声都使神经元反应的潜伏期延长，效果显著，但TB的延长作用更为显著；(8)随着探测声强度的升高，短纯音和调频声对Ⅰ类神经元声反应的掩蔽率都降低，但在各个探测声强度短纯音的掩蔽率都比调频声高。

A new dimensionaless parameter, called the threshold-crossing intens ity, is defined as a measure of the threshold-crossing severity, which is equal to the ratio of the product of average number of crossing events per unit time a nd mean threshold-crossing duration and amplitude over the threshold.

定义了一种度量过阀严重程度的新指标，称为"过阀强度"，等于单位时间过阀平均次数、平均过阀延续时间和平均过阀幅值三项乘积与阀值之比。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

"Second Life is remarkably easy to work with, and is very popular,"

"第二次生命是显着容易的工作，并且很受欢迎，"

For example, we usually assume that materials are homogeneous and isotropic and free of internal defects or flaws.

为了得到适合有限元分析的模型，我们必须经过如图2所示的简化步骤。