查询词典 erratic current

In the electrotechnics basis theory, it's very convenient to solve one branch's voltage and current by the equivalent transformation between the voltage source and current source.

利用电压源与电流源之间的等效变换求解某一支路电压、电流，是电工基础理论中非常方便的方法。

Because the coupling condition of NNGFM arises from the net current continuity imposed at the volume element interfaces, the relatively complex conversion formulation for partial current continuity condition of NGFM is unnecessary when applying G. E. T., and computation time is saved. The coefficient matrix of the coupled equations is tridiagonal, so it can be solved by forward elimination and backward substitution method.

NNGFM的基准校验及在大庆200MW核供热堆(NHR-200)上的应用表明，NNGFM计算精度和速度与第三类边界条件格林函数节块法NGFM〓相当，在相同精度下速度比CITATION能快1000倍；NNGFM给出的本征值、功率分布较NNGFM误差能减少一半以上，为更精确计算工作期、卡棒当量提供了条件。

As a result, the base current of Q12 is decreased and hence the emitter current is also decreased.

结果， Q12 基地潮流被减少并且因此放射器潮流并且被减少。

In other words, transistor emitter current will closely equal diode current at any given time.

或者说，晶体管发射极电流随时都接近二极管电流。

It is discussed in details in the paper that there are four regions depending upon the case occurred in the edge-crowding-effect of emitter current,The distributions and normalized voltage and current density,and their characters are discussed in this paper.

本文以发射极电流集边效应发生的程度，分为四个区域，详细探讨了归一化电位和电流密度分布的特点，指出：在Ⅰ？

The edge-crowding-effect of emitter current in a transistor caused by self-bias of base resistor is one of the factors to limit its capability of loaded current.

由基区电阻的自偏压引起的晶体管发射极电流集边效应，是限制晶体管承载电流能力的因素之一［1-4］。

Current flow between the emitter and base controls the current flow between the emitter and collector.the emitter of the transistor is the most heavily doped so it has the most excess electrons or holes.

由发射极到基极间的电流控制发射极到集电极间的电流，晶体管的发射极是重掺硅型的，所以它有过量的电子或空穴。练习翻译？遇到难题？快来翻吧

This constant emitter current, multiplied by a constant α ratio, gives a constant collector current through Rload, provided that there is enough battery voltage to keep the transistor in its active mode for any change in Rload's resistance.

这个恒定的发射极电流，乘以恒定的系数α，就得到流过负载Rload的恒定的集电极电流。前提是电池电压足够高，不论Rload如何变化，晶体管都能工作在放大区。

Well, the α ratio works similarly: if emitter current is held constant, collector current will remain at a stable, regulated value so long as the transistor has enough collector-to-emitter voltage drop to maintain it in its active mode.

系数α的作用与之类似：如果发射极电流保持恒定，只要集电极－发射极电压足以使其保持在放大区，集电极电流也将稳定保持。

It is found that the utilization of BAlq3/Alq3 isotype heterostructure emitter further reduces the leakage current, leading the BAlq3/Alq3 isotype heterostructure-based devices to higher output current and higher common-emitter gain at the same operational voltage compared to the case of Alq3 as the emitter.

研究发现，同Alq3单发射极层结构的金属基极晶体管相比，BAlq3/Alq3异质结发射极层的使用进一步降低了器件的漏电流，使器件在相同的电压下表现了更高的输出电流和更高的共发射极增益，为进一步实现高性能金属基极晶体管提供了新的方法。

Objective:To compare the response control and attention of Schizophrenic patients with that of the healthy controls by Integrated Visual and Auditorycontinuous performance test. To quantitate the impairment of cognitive function in patients, and to explore the relationship between cognitive function and the severity of the disorder.

目的：探讨精神分裂症病人在IVA持续操作测试中的反应控制能力、注意力等，并与健康人进行比较，从而量化精神分裂症病人的认知功能损害，并进一步探讨其认知功能与疾病严重程度的关系。

Main effective factors including subcooling degree, mechanical vibration, gas hydrate reformation, environment temperature, noncondensing gas and surfactant are analyzed.

指出过冷度、机械振动、重复生成水合物、环境温度、不凝性气体、添加剂是影响气体水合物生成的主要因素，还对R152a水合物的放冷进行了实验研究。